NTMFS4898NFT3G ON Semiconductor, NTMFS4898NFT3G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4898NFT3G
• Description: MOSFET N-CH 30V SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4898NFT3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.2A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 49.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3233pF @ 12V
• Power - Max: 930mW
• Mounting Type: Surface Mount
• Package / Case: SO-8FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.4 mOhms
• Forward Transconductance Gfs (max / Min): 77 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 117 A
• Power Dissipation: 73.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24.5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
0.01
100
100
0.1
10
10
1
1
0.1
1
Figure 9. Resistive Switching Time Variation
V
ID = 15 A
V
V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
DD
GS
C
GS
= 25°C
= 15 V
= 10 V
= 30 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
Thermal Limit
Package Limit
R
DS(on)
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
1
Limit
160
140
120
100
10
80
60
40
20
0
0
10
15
TYPICAL CHARACTERISTICS
Figure 13. g
30
10 ms
100 ms
1 ms
10 ms
dc
DRAIN CURRENT (A)
http://onsemi.com
t
t
t
t
d(off)
f
d(on)
r
45
FS
100
100
vs. Drain Current
60
5
250
200
150
100
75
30
25
20
15
10
50
5
0
0
0.1
25
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
90
J
GS
T
V
= 25°C
J
0.2
DS
, STARTING JUNCTION TEMPERATURE(°C)
= 0 V
V
SD
= 1.5 V
50
Starting Junction Temperature
105
, SOURCE−TO−DRAIN VOLTAGE (V)
0.3
120
75
0.4
0.5
100
0.6
125
I
D
0.7
= 39 A
150
0.8