NTMFS4852NT1G ON Semiconductor, NTMFS4852NT1G Datasheet

MOSFET N-CH 30V 16A SO8 FL

NTMFS4852NT1G

Manufacturer Part Number
NTMFS4852NT1G
Description
MOSFET N-CH 30V 16A SO8 FL
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMFS4852NT1G

Package / Case
5-DFN, SO8 FL
Mounting Type
Surface Mount
Power - Max
900mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
71.3nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
16A
Drain To Source Voltage (vdss)
30V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.1 mOhm @ 30A, 10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4852NT1G
Manufacturer:
ON
Quantity:
4 000
Part Number:
NTMFS4852NT1G
Manufacturer:
ON Semiconductor
Quantity:
1 000
NTMFS4852N
Power MOSFET
30 V, 155 A, Single N−Channel, SO−8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 0
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
10 sec
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Device
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
Low Side Switching
qJA
qJA,
qJA
qJC
= 49 A
(Note 1)
(Note 2)
(Note 1)
t v 10 sec
DS(on)
pk
qJA
qJA
qJA
qJC
DD
, L = 0.3 mH, R
= 50 V, V
v
to Minimize Conduction Losses
Parameter
t
GS
Steady
p
State
=10ms
(T
G
= 10 V,
J
= 25 W)
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
A
A
A
C
C
C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
I
Dmaxpkg
V
T
dV/dt
EAS
V
I
P
P
P
P
T
STG
T
DSS
DM
I
I
I
I
I
GS
D
D
D
D
S
J
D
D
D
D
L
,
−55 to
Value
+150
2.31
5.95
0.90
86.2
±20
155
112
310
100
360
260
30
25
18
40
29
16
11
72
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
W
V
V
A
A
A
A
A
A
A
*For additional information on our Pb−Free strategy
†For information on tape and reel specifications,
NTMFS4852NT1G
NTMFS4852NT3G
SO−8 FLAT LEAD
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
CASE 488AA
(BR)DSS
(Note: Microdot may be in either location)
30 V
STYLE 1
Device
G (4)
A
Y
WW
G
ORDERING INFORMATION
1
N−CHANNEL MOSFET
http://onsemi.com
3.3 mW @ 4.5 V
2.1 mW @ 10 V
D (5,6)
R
= Assembly Location
= Year
= Work Week
= Pb−Free Package
DS(ON)
(Pb−Free)
(Pb−Free)
Package
SO−8FL
SO−8FL
Publication Order Number:
MAX
S (1,2,3)
G
S
S
S
MARKING
DIAGRAM
AYWWG
NTMFS4852N/D
4852N
Tape & Reel
Tape & Reel
D
D
Shipping
G
1500 /
5000 /
I
D
155 A
MAX
D
D

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NTMFS4852NT1G Summary of contents

Page 1

... Microdot may be in either location 310 100 A Dmaxpkg Device T , −55 to °C J NTMFS4852NT1G T +150 STG NTMFS4852NT3G dV/dt 6 V/ns EAS 360 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications T 260 ° ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain ...

Page 4

3 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.013 0.011 0.009 0.007 0.005 0.003 0.001 ...

Page 5

C 5000 iss 4000 3000 2000 C oss 1000 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

Page 6

Duty Cycle = 50% 20 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 7

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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