NTMFS4936NT1G ON Semiconductor, NTMFS4936NT1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4936NT1G
• Description: MOSFET N-CH 30V 11.6A SO8 FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4936NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 3044pF @ 15V
• Power - Max: 920mW
• Mounting Type: Surface Mount
• Package / Case: 5-DFN, SO8 FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19.5 A
• Power Dissipation: 43 W
• Forward Transconductance Gfs (max / Min): 50 S
• Gate Charge Qg: 43 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.011
140
120
100
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
80
60
40
20
0
1
2.5
−50
0
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
4.5 V to
3.5
= 30 A
Figure 5. On−Resistance Variation with
−25
10 V
Figure 1. On−Region Characteristics
= 10 V
V
V
DS
GS
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
4.5
0
1
4.0 V
5.5
25
Temperature
Voltage
2.8 V
6.5
50
2
3.0 V
7.5
75
3.2 V
3.4 V
3.6 V
2.4 V
TYPICAL CHARACTERISTICS
8.5
100
V
3
GS
I
T
D
J
2.6 V
= 30 A
= 3.8 V
= 25°C
http://onsemi.com
9.5
125
10.5
150
4
4
0.0055
0.0045
0.0035
0.0025
10000
0.006
0.005
0.004
0.003
0.002
1000
140
120
100
100
80
60
40
20
10
0
20 30 40 50 60 70 80 90 100 110 120 130 14
1
5
Figure 4. On−Resistance vs. Drain Current and
V
V
T
Figure 6. Drain−to−Source Leakage Current
GS
DS
J
= 25°C
= 10 V
= 0 V
V
V
Figure 2. Transfer Characteristics
1.5
DS
GS
10
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
I
D
T
, DRAIN CURRENT (A)
T
J
2
J
= 25°C
Gate Voltage
= 150°C
15
vs. Voltage
T
T
V
V
J
J
GS
GS
= 125°C
= 85°C
T
J
= 4.5 V
= 10 V
2.5
= 125°C
20
T
3
J
= −55°C
25
3.5
30
4