NTMFS4936NT1G ON Semiconductor, NTMFS4936NT1G Datasheet - Page 4
![MOSFET N-CH 30V 11.6A SO8 FL](/photos/5/60/56063/5-dfn_488aa_sml.jpg)
NTMFS4936NT1G
Manufacturer Part Number
NTMFS4936NT1G
Description
MOSFET N-CH 30V 11.6A SO8 FL
Manufacturer
ON Semiconductor
Datasheet
1.NTMFS4936NT3G.pdf
(7 pages)
Specifications of NTMFS4936NT1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
3044pF @ 15V
Power - Max
920mW
Mounting Type
Surface Mount
Package / Case
5-DFN, SO8 FL
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
19.5 A
Power Dissipation
43 W
Forward Transconductance Gfs (max / Min)
50 S
Gate Charge Qg
43 nC
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4936NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.011
140
120
100
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
80
60
40
20
0
1
2.5
−50
0
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
4.5 V to
3.5
= 30 A
Figure 5. On−Resistance Variation with
−25
10 V
Figure 1. On−Region Characteristics
= 10 V
V
V
DS
GS
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
4.5
0
1
4.0 V
5.5
25
Temperature
Voltage
2.8 V
6.5
50
2
3.0 V
7.5
75
3.2 V
3.4 V
3.6 V
2.4 V
TYPICAL CHARACTERISTICS
8.5
100
V
3
GS
I
T
D
J
2.6 V
= 30 A
= 3.8 V
= 25°C
http://onsemi.com
9.5
125
10.5
150
4
4
0.0055
0.0045
0.0035
0.0025
10000
0.006
0.005
0.004
0.003
0.002
1000
140
120
100
100
80
60
40
20
10
0
20 30 40 50 60 70 80 90 100 110 120 130 14
1
5
Figure 4. On−Resistance vs. Drain Current and
V
V
T
Figure 6. Drain−to−Source Leakage Current
GS
DS
J
= 25°C
= 10 V
= 0 V
V
V
Figure 2. Transfer Characteristics
1.5
DS
GS
10
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
I
D
T
, DRAIN CURRENT (A)
T
J
2
J
= 25°C
Gate Voltage
= 150°C
15
vs. Voltage
T
T
V
V
J
J
GS
GS
= 125°C
= 85°C
T
J
= 4.5 V
= 10 V
2.5
= 125°C
20
T
3
J
= −55°C
25
3.5
30
4