NIF9N05CLT1G ON Semiconductor, NIF9N05CLT1G Datasheet - Page 2
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NIF9N05CLT1G
Manufacturer Part Number
NIF9N05CLT1G
Description
MOSFET N-CH 52V 2.6A SOT223
Manufacturer
ON Semiconductor
Datasheet
1.NIF9N05CLT3G.pdf
(6 pages)
Specifications of NIF9N05CLT1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
52V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
250pF @ 35V
Power - Max
1.69W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.8 S
Drain-source Breakdown Voltage
59 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.6 A
Power Dissipation
1690 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.6A
Drain Source Voltage Vds
52V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NIF9N05CLT1GOS
NIF9N05CLT1GOS
NIF9N05CLT1GOSTR
NIF9N05CLT1GOS
NIF9N05CLT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NIF9N05CLT1G
Manufacturer:
ON
Quantity:
950
Company:
Part Number:
NIF9N05CLT1G
Manufacturer:
ON
Quantity:
30 000
Final Product/Process Change Notification #16003
QUALIFICATION PLAN:
Deviec: PZT751T1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 8500 c
HTRB 150C, Bias=80% rated Vr, 1008 hrs
Device: SMBF1066T1
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 8500 c
HTRB 150C, Bias=80% rated Vr, 1008 hrs
Device: NIF9N05CLT1
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: NIF5003NT1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: NTF3055L08T1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 1008 hrs
TC Ta=-65/+150C, 1000 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
HTGB 150C, Bias=100% rated gate V, 1008 hrs
Device: MCR08MT1G
PC MSL1 @ 260C with SAT pre and post MSL
H3TRB 85C/85%RH 504 hrs
TC Ta=-65/+150C, 500 cycles
AC/PC 121C, 15psig, 100% RH, 96 hrs
IOL Ta=25C, delta Tj=100C max, Ton=Toff=3.5 min, 7500 c
HTRB 150C, Bias=80% rated Vr, 504 hrs
ELECTRICAL CHARACTERISTIC SUMMARY:
No changes to electrical performance occurred.
CHANGED PART IDENTIFICATION:
Parts with date code of 721 or greater may be manufactured using the new BOM. Devices on
this notice will be rated at MSL1 260 at the expiration of this FPCN.
Issue Date: 02-Apr-2007
Rev.07-02-06
Results (Rej/SS)
0/248
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0/248
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