NTTFS4840NTWG ON Semiconductor, NTTFS4840NTWG Datasheet - Page 2
![MOSFET N-CH 30V 4.6A 8WDFN](/photos/30/99/309910/wdfn-8_sml.jpg)
NTTFS4840NTWG
Manufacturer Part Number
NTTFS4840NTWG
Description
MOSFET N-CH 30V 4.6A 8WDFN
Manufacturer
ON Semiconductor
Datasheet
1.NTTFS4840NTWG.pdf
(7 pages)
Specifications of NTTFS4840NTWG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 10V
Input Capacitance (ciss) @ Vds
580pF @ 15V
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
8-WDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
15 Ohms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
5.5 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 6)
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
V
Parameter
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
Q
R
Q
(BR)DSS
J
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
DS(on)
C
C
g
d(on)
d(off)
DSS
GSS
G(TH)
= 25°C unless otherwise specified)
FS
oss
t
t
rss
GS
GD
iss
r
f
/T
/T
J
J
V
V
V
V
GS
GS
http://onsemi.com
GS
GS
V
= 0 V, f = 1.0 MHz, V
V
= 10 V to 11.5 V
V
V
= 4.5 V, V
= 10 V, V
V
V
GS
V
DS
GS
GS
V
I
DS
GS
D
GS
DS
= 4.5 V
= 15 A, R
= 24 V
Test Condition
= 4.5 V, V
= 0 V,
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
2
DS
DS
DS
, I
= 15 V, I
D
= 15 V, I
GS
D
G
DS
= 250 mA
D
= 250 mA
= 3.0 W
= ±20 V
= 20 A
= 15 V,
T
T
DS
I
I
I
I
D
J
D
D
D
D
D
J
= 125°C
= 20 A
= 25°C
= 20 A
= 10 A
= 20 A
= 10 A
= 20 A
= 15 V
Min
1.5
30
Symbol
R
R
R
R
qJC
qJA
qJA
qJA
0.75
10.8
10.5
38.2
11.5
Typ
580
140
5.6
5.5
2.2
2.8
2.6
17
15
15
28
25
22
80
Value
149.2
57.5
28.7
4.5
±100
Max
1.0
3.0
10
24
36
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mA
nA
pF
nC
nC
ns
V
V
S