NDD04N60Z-1G ON Semiconductor, NDD04N60Z-1G Datasheet - Page 5

• Manufacturer Part Number: NDD04N60Z-1G
• Description: MOSFET N-CH 600V 4A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD04N60Z-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 83 W
• Forward Transconductance Gfs (max / Min): 3.3 S
• Gate Charge Qg: 19 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.001
0.01
0.01
1.0
0.1
1.0
0.1
10
10
0.000001
0.000001
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
20%
10%
SINGLE PULSE
SINGLE PULSE
0.00001
0.00001
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.0001
0.0001
Figure 14. Thermal Impedance for NDD04N60Z
Figure 15. Mounting Position for Isolation Test
Figure 13. Thermal Impedance for NDF04N60Z
TYPICAL CHARACTERISTICS
0.001
0.001
http://onsemi.com
0.01
0.01
PULSE TIME (s)
PULSE TIME (s)
5
HEATSINK
0.110″ MIN
LEADS
0.1
0.1
1.0
1.0
10
10
R
Steady State
R
Steady State
qJC
qJC
100
100
= 4.4°C/W
= 1.5°C/W
1000
1000