NDF05N50ZG ON Semiconductor, NDF05N50ZG Datasheet - Page 2

• Manufacturer Part Number: NDF05N50ZG
• Description: MOSFET N-CH 500V TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF05N50ZG

• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Mounting Type: Through Hole
• Power - Max: 28W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18.5nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 5A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 5 A
• Power Dissipation: 28 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 18.5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DYNAMIC CHARACTERISTICS
RESISTIVE SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
Static Drain−to−Source
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Coefficient
On−Resistance
Characteristic
Parameter
(T
DBV
Symbol
R
V
BV
J
t
t
I
I
C
DS(on)
GS(th)
C
C
V
V
DT
g
Q
Q
d(on)
d(off)
GSS
DSS
Q
= 25°C unless otherwise noted)
Q
R
t
oss
t
FS
GP
t
SD
DSS
iss
rss
rr
gd
gs
r
f
DSS
g
g
rr
J
/
C
= 25°C unless otherwise noted)
(Note 3) NDD05N50Z−1
V
http://onsemi.com
(Note 4) NDD05N50Z
(Note 3) NDP05N50Z
(Note 3) NDF05N50Z
DS
I
= 500 V, V
S
V
V
V
V
V
V
V
V
V
DS
= 5 A, di/dt = 100 A/ms
GS
Reference to 25°C,
GS
DS
DS
DD
I
DD
GS
GS
S
Test Conditions
= 5 A, V
NDD05N50Z
NDP05N50Z
= 25 V, V
NDF05N50Z
= V
= 0 V, V
V
= 10 V, I
= 15 V, I
= 250 V, I
= 250 V, I
= 10 V, R
f = 1.0 MHz
2
= 0 V, I
V
I
GS
D
GS
GS
= 1 mA
GS
= ±20 V
= 10 V
, I
GS
D
= 0 V
D
DD
D
D
GS
D
D
G
= 1 mA
= 50 mA
= 2.5 A
= 2.2 A
= 0 V
= 30 V
= 5 A,
= 5 A,
= 5 W
= 0 V,
Symbol
R
R
150°C
qJC
qJA
25°C
Min
500
3.0
Value
1.25
18.5
1.25
Typ
530
255
1.3
4.4
1.5
0.6
3.5
6.5
4.5
50
50
38
80
68
15
10
11
15
24
14
4
Max
±10
1.5
4.5
1.6
50
1
°C/W
V/°C
Unit
Unit
mA
mA
pF
nC
mC
ns
ns
W
W
V
V
S
V
V