NDD05N50Z-1G ON Semiconductor, NDD05N50Z-1G Datasheet - Page 6

• Manufacturer Part Number: NDD05N50Z-1G
• Description: MOSFET N-CH 500V 5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD05N50Z-1G

• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 83W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18.5nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NDF05N50ZG
NDP05N50ZG
NDD05N50Z−1G
NDD05N50ZT4G
Order Number
Gate
Measurement made between leads and heatsink with all leads shorted together.
NDP05N50ZG
NDF05N50ZG
AYWW
Drain
or
Figure 15. Mounting Position for Isolation Test
Source
MARKING DIAGRAMS
A
Y
WW
G
http://onsemi.com
TO−220FP
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK
Gate
IPAK
= Location Code
= Year
= Work Week
= Pb−Free Package
1
Drain
Drain
6
4
2
3
Source
HEATSINK
0.110″ MIN
LEADS
Gate
1
Drain
Drain 3
4
2
Source
2500 / Tape & Reel
(In Development)
(In Development)
50 Units / Rail
50 Units / Rail
75 Units / Rail
Shipping
†