2SK4078-ZK-AY Renesas Electronics America, 2SK4078-ZK-AY Datasheet - Page 7

• Manufacturer Part Number: 2SK4078-ZK-AY
• Description: MOSFET 40V N-CH MP-3Z/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK4078-ZK-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.01
100
100
0.1
20
16
12
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
4
0
1
1
-100
0.1
0
V
V
R
DD
GS
G
SWITCHING CHARACTERISTICS
V
= 0 Ω
-50
F(S-D)
= 20 V
= 10 V
T
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
V
- Channel Temperature - ° C
GS
GS
- Source to Drain Voltage - V
I
D
= 4.5 V, I
= 10 V
0.5
- Drain Current - A
0
1
10 V, 25 A
t
t
t
50
d(off)
r
f
D
= 13 A
0 V
100
10
1
t
d(on)
Pulsed
150
Pulsed
Data Sheet D18885EJ1V0DS
200
100
1.5
10000
1000
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
10
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
35
30
25
20
15
10
1
5
0
0.1
0.1
0
V
f = 1 MHz
di/dt = 100 A/μs
V
GS
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
= 0 V
V
= 0 V
DS
10
I
F
- Drain to Source Voltage - V
V
- Diode Forward Current - A
Q
DD
G
V
1
1
= 32 V
- Gate Charge - nC
DS
20 V
20
8 V
30
V
GS
10
10
I
D
= 50 A
2SK4078
40
C
C
C
iss
oss
rss
100
100
50
12
9
6
3
0
5