AO4409 Alpha & Omega Semiconductor Inc, AO4409 Datasheet - Page 4

• Manufacturer Part Number: AO4409
• Description: MOSFET P-CH -30V -15A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 15V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1023-2

Rev 7: Feb. 2011
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000.0
8
6
4
2
0
0.001
100.0
0.01
10.0
0
0.1
1.0
0.1
0.0
10
0.00001
1
V
I
D
0.01
DS
=-15A
=-15V
R
limited
D=T
T
R
Figure 7: Gate-Charge Characteristics
Figure 9: Maximum Forward Biased Safe
20
J,PK
DS(ON)
JA
=75° C/W
on
=T
/T
A
+P
0.0001
Operating Area (Note F)
40
0.1
DM
T
T
.Z
J(Max)
A
=25°C
JA
Q
.R
g
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
=150°C
60
-V
Single Pulse
(nC)
JA
DS
(Volts)
0.001
1
80
100
10
0.01
www.aosmd.com
120
10ms
10 s
100 s
1ms
10s
DC
Pulse Width (s)
100
0.1
8000
7000
6000
5000
4000
3000
2000
1000
10000
1000
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
0.00001
1
0
Figure 10: Single Pulse Power Rating Junction-to-
C
rss
1
Figure 8: Capacitance Characteristics
5
P
D
0.001
C
oss
T
on
10
Ambient (Note F)
Pulse Width (s)
T
10
-V
DS
0.1
15
(Volts)
C
iss
100
20
T
A
10
=25° C
25
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1000
AO4409
1000
30