UPA2712GR-E1-AT Renesas Electronics America, UPA2712GR-E1-AT Datasheet

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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

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P-CHANNEL POWER MOS FET DESCRIPTION µ The PA2712GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance − mΩ MAX ...

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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA - 100 I ...

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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - − −4.5 V −4 0.2 - 0.4 - 0 Drain to ...

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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 = −4 −4 − −5 Pulsed 0 - 100 T - Channel Temperature - °C ...

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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 = − − Ω −20 → Starting T = 25° ...

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Data Sheet G15980EJ2V0DS µ µ µ µ PA2712GR 7 ...

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The information in this document is current as of November, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...