NDD03N60Z-1G ON Semiconductor, NDD03N60Z-1G Datasheet - Page 4
![MOSFET N-CH 600V IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NDD03N60Z-1G
Manufacturer Part Number
NDD03N60Z-1G
Description
MOSFET N-CH 600V IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF03N60ZG.pdf
(10 pages)
Specifications of NDD03N60Z-1G
Package / Case
IPak, TO-251 (2 straight leads + tab)
Mounting Type
Through Hole
Power - Max
61W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
12nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.6A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1.2A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 Ohms
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.65 A
Power Dissipation
61 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
12 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD03N60Z-1G
Manufacturer:
ON
Quantity:
2 700
Company:
Part Number:
NDD03N60Z-1G
Manufacturer:
ON Semiconductor
Quantity:
40
Company:
Part Number:
NDD03N60Z-1G
Manufacturer:
ON
Quantity:
12 500
1000
0.10
10.0
1.0
100
1.0
10
0
1
Figure 10. Resistive Switching Time Variation
V
Figure 7. Drain−to−Source Leakage Current
V
DD
50 100 150 200 250 300 350 400 450 500 550 600
GS
I
D
= 300 V
= 3 A
= 10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
T
versus Voltage
T
J
J
= 150°C
= 125°C
15.0
14.0
13.0
12.0
10.0
10
11.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
Drain−to−Source Voltage versus Total Charge
Q
1
GS
Figure 9. Gate−to−Source Voltage and
2
TYPICAL CHARACTERISTICS
Q
3
g
, TOTAL GATE CHARGE (nC)
t
t
t
t
d(off)
r
d(on)
V
f
4
http://onsemi.com
DS
5
100
Q
GD
Q
6
4
T
7
10.0
700
650
600
550
500
450
400
350
300
250
200
150
100
1.0
0.1
50
0
0.3
8
0
V
T
C
DS
I
J
9
D
rss
Figure 11. Diode Forward Voltage versus
= 25°C
0.4
5
V
= 300 V
= 3 A
GS
V
V
10
DS
SD
T
Figure 8. Capacitance Variation
10
J
0.5
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
= 150°C
11
15
12
0.6
C
350
300
250
200
150
100
50
0
125°C
oss
20
C
Current
0.7
iss
25
25°C
0.8
30
−55°C
0.9
35
1.0
T
V
f = 1 MHz
40
J
GS
= 25°C
= 0 V
1.1
45
1.2
50