2SK4091-ZK-E1-AY Renesas Electronics America, 2SK4091-ZK-E1-AY Datasheet - Page 5

• Manufacturer Part Number: 2SK4091-ZK-E1-AY
• Description: MOSFET 30V N-CH MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK4091-ZK-E1-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
1000
120
100
100
0.1
10
80
60
40
20
0
1
0.1
FORWARD BIAS SAFE OPERATING AREA
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
Single pulse
I
I
R
(V
D(pulse)
D(DC)
c
DS(on)
GS
= 25°C
V
= 10 V)
25
DS
T
Limited
C
- Drain to Source Voltage - V
- Case Temperature - °C
50
1
1000
100
0.1
10
1
100
75
μ
100
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 m
A
= 25°C)
125
Data Sheet D18635EJ1V0DS
150
100
10 m
100 m
PW - Pulse Width – s
1
25
20
15
10
40
30
20
10
5
0
0
DRAIN CURRENT vs. CASE TEMPERATURE
0
0
R
R
th(ch-A)
th(ch-C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
25
25
=
=
T
C
125°C/Wi
5.95°C/Wi
T
- Case Temperature - °C
C
- Case Temperature - °C
50
50
Single pulse
100
75
75
100
1000
100
125
125
2SK4091
150
150
3