NTD12N10T4G ON Semiconductor, NTD12N10T4G Datasheet

MOSFET N-CH 100V 12A DPAK

NTD12N10T4G

Manufacturer Part Number
NTD12N10T4G
Description
MOSFET N-CH 100V 12A DPAK
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of NTD12N10T4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
165 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
1.28W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.165Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
12A
Power Dissipation
1.76W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD12N10T4GOS
NTD12N10T4GOS
NTD12N10T4GOSTR

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NTD12N10
Power MOSFET
12 Amps, 100 Volts
N−Channel Enhancement−Mode DPAK
Features
Typical Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
3. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 8
MAXIMUM RATINGS
Drain−to−Source Voltage
Drain−to−Source Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
I
Thermal Resistance
Maximum Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
L
Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Avalanche Energy Specified
I
Mounting Information Provided for the DPAK Package
These are Pb−Free Devices
PWM Motor Controls
Power Supplies
Converters
pad size.
Derate above 25°C
DD
= 12 Apk, L = 1.0 mH, R
DSS
= 50 Vdc, V
and R
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
DS(on)
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Continuous @ T
− Pulsed (Note 3)
GS
Rating
J
= 10 Vdc,
= 25°C
Specified at Elevated Temperature
(T
G
C
GS
A
A
= 25 W)
= 25°C unless otherwise noted)
= 25°C (Note 1)
= 25°C (Note 2)
= 1.0 MW)
A
A
p
= 25°C
=100°C
≤ 10 ms)
Symbol
T
V
V
V
R
R
R
J
V
E
I
GSM
P
DGR
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
AS
D
D
D
L
stg
−55 to
Value
+175
± 20
± 30
56.6
0.38
1.76
1.28
2.65
100
100
117
260
7.0
12
36
75
85
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
W
W
W
1 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
2
V
(BR)DSS
100 V
3
3
Y
WW
T12N10
G
ORDERING INFORMATION
4
4
G
http://onsemi.com
(Surface Mount)
(Straight Lead)
CASE 369C
CASE 369D
165 mW @ 10 V
STYLE 2
STYLE 2
R
N−Channel
DPAK
DPAK
DS(on)
= Year
= Work Week
= Device Code
= Pb−Free Package
D
MARKING DIAGRAMS
Publication Order Number:
& PIN ASSIGNMENTS
TYP
S
Gate
Gate
1
1
Drain
Drain
Drain
Drain
NTD12N10/D
4
2
4
2
I
D
12 A
MAX
3
Source
3
Source

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NTD12N10T4G Summary of contents

Page 1

NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • I and R Specified at Elevated Temperature DSS DS(on) • Mounting Information ...

Page 2

... Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTD12N10G NTD12N10−1G NTD12N10T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) C ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 7 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge ...

Page 6

SINGLE PULSE T = 25° 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE C SEATING −T− PLANE RECOMMENDED FOOTPRINT* 6.20 3.0 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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