2SK3919-AZ Renesas Electronics America, 2SK3919-AZ Datasheet - Page 9

• Manufacturer Part Number: 2SK3919-AZ
• Description: MOSFET N-CH 25V MP-3/TO-251
• Manufacturer: Renesas Electronics America

Specifications of 2SK3919-AZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
Mold Area
EQUIVALENT CIRCUIT
1.14 MAX.
Gate
0.76 ±0.1
2.3 TYP.
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
4
1
5.3 TYP.
4.3 MIN.
6.6 ±0.2
Source
Drain
2
3
2.3 TYP.
Body
Diode
No Plating
0.5 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.3 ±0.1
0.5 ±0.1
Data Sheet D17078EJ4V0DS
2) TO-252 (MP-3ZK)
1.14 MAX.
4
1
2.3
5.1 TYP.
4.3 MIN.
6.5±0.2
2
2.3
3
0.76±0.12
1. Gate
2. Drain
3. Source
4. Fin (Drain)
No Plating
2.3±0.1
1.0
0.5±0.1
0 to 0.25
2SK3919
No Plating
0.5±0.1
7