AO4427 Alpha & Omega Semiconductor Inc, AO4427 Datasheet - Page 3

• Manufacturer Part Number: AO4427
• Description: MOSFET P-CH -30V -12.5A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4427

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12.5A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 15V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1027-2

AO4427
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
12
11
10
30
-10V
20
10
50
40
30
20
10
9
8
0
0
0
0
4
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Figure 1: On-Region Characteristics
5
5
1
-5V
25°C
-6V
6
10
Gate Voltage
2
-V
-V
-4.5V
DS
GS
-I
D
I
(Volts)
D
(Volts)
(A)
7
=-12.5A
125°C
V
15
3
V
V
GS
GS
GS
V
=-10V, V
=-20V
8
=-10V
GS
=-4V
20
4
9
DS
=-15V,
25
10
5
1.6
1.4
1.2
0.8
25
20
15
10
1
1.0E+01
1.0E+00
5
0
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0
1
I
D
=-12.5A
1.5
0.0
25
Figure 4: On-Resistance vs. Junction
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
2
125°C
0.2
50
Temperature (°C)
V
2.5
V
I
D
Temperature
DS
GS
=-10A
-V
75
=-5V
0.4
=-10V
GS
(Volts)
-V
3
SD
100
25°C
0.6
(Volts)
125°C
3.5
V
I
D
GS
=-12.5A
125
=-20V
0.8
4
150
25°C
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4.5
1.0
175
5
1.2