AO4437 Alpha & Omega Semiconductor Inc, AO4437 Datasheet - Page 4

MOSFET P-CH -12V -11A 8-SOIC

AO4437

Manufacturer Part Number
AO4437
Description
MOSFET P-CH -12V -11A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4437

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
47nC @ 4.5V
Input Capacitance (ciss) @ Vds
4750pF @ 6V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1031-2

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AO4437
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5.00E+00
4.00E+00
3.00E+00
2.00E+00
1.00E+00
0.00E+00
100.0
10.0
1.0
0.1
0.01
0.1
0.1
10
0.00001
1
R
limited
Figure 9: Maximum Forward Biased Safe
DS(ON)
0
D=T
T
R
J,PK
θJA
Figure 7: Gate-Charge Characteristics
5
=90°C/W
on
=T
V
I
D
Operating Area (Note E)
/T
DS
=-11A
1s
A
+P
=-6V
10
0.0001
DM
1
10s
T
T
.Z
15
J(Max)
A
=25°C
-V
θJA
DC
DS
.R
=150°C
-Q
20
θJA
(Volts)
g
Figure 11: Normalized Maximum Transient Thermal Impedance
(nC)
0.001
25
Single Pulse
10
30
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10µs
100µs
1ms
10ms
0.1s
35
0.01
40
100
45
Pulse Width (s)
0.1
6400
5600
4800
4000
3200
2400
1600
40
30
20
10
800
0
0.001
0
Figure 10: Single Pulse Power Rating Junction-to-
0
C
rss
0.01
1
Figure 8: Capacitance Characteristics
P
D
C
T
oss
5
on
0.1
Ambient (Note E)
Pulse Width (s)
T
10
-V
DS
C
1
10
(Volts)
iss
10
100
T
T
J(Max)
A
=25°C
15
=150°C
100
1000
1000
20

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