AOD4185 Alpha & Omega Semiconductor Inc, AOD4185 Datasheet

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AOD4185

Manufacturer Part Number
AOD4185
Description
MOSFET P-CH 40V 50A DPAK
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOD4185

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
2550pF @ 20V
Power - Max
62.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1222-2

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Part Number
Manufacturer
Quantity
Price
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AOD4185
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AOD4185
Manufacturer:
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Part Number:
AOD4185L
Manufacturer:
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Part Number:
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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AOD4185/AOI4185 uses advanced trench
technology to provide excellent R
charge. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current applications.
D
AOD4185/AOI4185
P-Channel Enhancement Mode Field Effect Transistor
-RoHS Compliant
-Halogen Free*
Top View
B,H
B
A
C
G
TO252
DPAK
C
T
T
T
T
T
T
C
C
C
C
A
A
S
=25°C
=100°C
=25°C
=100°C
=25°C
=70°C
D
D,F
Bottom View
A,G
A,G
C
=25°C unless otherwise noted
DS(ON)
C
and low gate
Steady-State
Steady-State
S
t ≤ 10s
Symbol
V
V
I
I
I
E
P
P
T
G
D
DM
AR
J
DS
GS
AR
D
DSM
, T
Top View
STG
D
Symbol
G
Features
V
I
R
R
D
R
R
DS
DS(ON)
DS(ON)
= -50A
θJA
θJC
D
(V) = -40V
TO-251A
S
IPAK
< 15mΩ
< 20mΩ
Maximum
-55 to 175
Bottom View
-115
62.5
Typ
±20
-40
-50
-35
-42
2.5
1.6
88
31
15
41
100% Rg Tested!
2
100% UIS Tested!
(V
(V
(V
D
GS
GS
GS
S
= -10V)
= -10V)
= -4.5V)
Max
2.4
20
50
D
G
G
Units
Units
°C/W
°C/W
°C/W
www.aosmd.com
mJ
°C
W
V
V
A
D
S

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AOD4185 Summary of contents

Page 1

... AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent R charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. -RoHS Compliant -Halogen Free* TO252 DPAK Top View ...

Page 2

... AOD4185/AOI4185 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AOD4185/AOI4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 -10V 100 (Volts) DS Figure 1: On-Region Characteristics =-4. =-10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 100 -6.0V -4. -4. =-3. 1.5 2 1.8 1.6 1.4 1 0.6 Figure 4: On-Resistance vs ...

Page 4

... AOD4185/AOI4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-20V DS I =-20A (nC) g Figure 7: Gate-Charge Characteristics 1000 100 R DS(ON) limited =175°C J(Max) T =25°C C 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJC θJC J, =2.4°C/W θJC 1 0.1 Single Pulse ...

Page 5

... AOD4185/AOI4185 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 T (°C) CASE Figure 12: Power De-rating (Note B) 10000 1000 100 10 1 0.0001 0.001 Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note θJA J, =50°C/W 1 θJA 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & ...

Page 6

... AOD4185/AOI4185 - VDC + Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs -10V - Vds VDC + DUT Resistive Switching Test Circuit & Waveforms RL t d(on) Vgs - DUT ...

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