BSP318S L6327 Infineon Technologies, BSP318S L6327 Datasheet - Page 4

• Manufacturer Part Number: BSP318S L6327
• Description: MOSFET N-CH 60V 2.6A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP318S L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP318SL6327INTR; BSP318SL6327XT; SP000235371

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate charge at threshold
V
Gate charge at V
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= 30 V, I
= 30 V, I
= 40 V, I
= 40 V, I
= 40 V, I
= 40 V , I
= 0 V, I
F
F =
F
= I
D
D
D
= 5.2 A
D
l
S
S
= 0.1 A, V = 1 V
= 2.6 A, V
= 2.6 A, V
= 2.6 A
, d i
, d i
GS
F
F
= 5 V
/d t = 100 A/µs
/d t = 100 A/µs
GS
GS
= 0 to 5 V
= 0 to 10 V
j
= 25 °C, unless otherwise specified
Rev 2.2
Page 4
Symbol
Q
Q g(5)
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
G(th)
g
rr
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
typ.
typ.
0.95
0.4
3.6
0.1
14
50
7
-
-
max.
max.
10.4
0.15
0.6
2.6
1.2
10
20
75
2008-03-21
-
BSP318S
Unit
nC
V
Unit
A
V
ns
µC