UPA1980TE-T1-AT Renesas Electronics America, UPA1980TE-T1-AT Datasheet - Page 9

• Manufacturer Part Number: UPA1980TE-T1-AT
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1980TE-T1-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4V
• Input Capacitance (ciss) @ Vds: 272pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (T
0.01
0.01
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE
0.1
0.1
140
120
100
10
10
FORWARD CURRENT vs. FORWARD VOLTAGE
80
60
40
20
1
1
0
0.6
0
0
V
Pulsed
T
G S
A
V
= 125°C
= 0 V
F(S-D)
0.2
–25°C
SOURCE TO DRAIN DIODE
75°C
25°C
FORWARD VOLTAGE
10
0.8
V
- Source to Drain Voltage - V
V
R
F
- Reverse Voltage - V
0.4
- Forward Voltage - V
20
0.6
1
30
0.8
f = 1.0 MHz
1.2
40
1
Pulsed
Data Sheet G16550EJ1V0DS
1.4
1.2
50
10000
0.001
1000
0.01
100
0.1
10
REVERSE CURRENT vs. REVERSE VOLTAGE
1
0
Pulsed
A
= 25°C)
10
V
R
- Reverse Voltage - V
20
30
T
A
40
= 125°C
–25°C
PA1980
75°C
25°C
50
7