NTGS5120PT1G ON Semiconductor, NTGS5120PT1G Datasheet

NTGS5120PT1G

Manufacturer Part Number

NTGS5120PT1G

Description

MOSFET P-CH 60V 1.8A 6-TSOP

Manufacturer

ON Semiconductor

Datasheet

1.NTGS5120PT1G.pdf (5 pages)

Specifications of NTGS5120PT1G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

111 mOhm @ 2.9A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

1.8A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

18.1nC @ 10V

Input Capacitance (ciss) @ Vds

942pF @ 30V

Power - Max

600mW

Mounting Type

Surface Mount

Package / Case

SC-74-6

Configuration

Single Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.111 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.5 A

Power Dissipation

1400 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Part Number

Manufacturer

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Price

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Part Number:

NTGS5120PT1G

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Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

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Manufacturer:

Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTGS5120PT1G

Manufacturer:

Quantity:

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Company:

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NTGS5120PT1G

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NTGS5120P

Power MOSFET

−60 V, −2.9 A, Single P−Channel, TSOP−6

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

2. Surface−mounted on FR4 board using the minimum recommended pad size.

June, 2008 − Rev. P0

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

60 V BVds, Low R

4.5 V Gate Rating

This is a Pb−Free Device

High Side Load Switch

Power Switch for Printers, Communication Equipment

[2 oz] including traces)

Parameter

DS(on)

t v 5 s

Steady

State

= 10 ms

= 25°C unless otherwise stated)

in TSOP−6 Package

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

DSS

STG

−55 to

Value

$20

−2.5

−2.0

−2.9

−1.8

−1.3

−60

150

260

1.1

1.4

0.6

−8

Unit

°C

NTGS5120PT1G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

−60 V

Device

(Note: Microdot may be in either location)

ORDERING INFORMATION

= Device Code

= Date Code

= Pb−Free Package

http://onsemi.com

PIN ASSIGNMENT

Drain

142 mW @ −4.5 V

111 mW @ −10 V

(Pb−Free)

CASE 318G

Package

TSOP−6

DS(ON)

STYLE 1

TSOP−6

Drain

P−Channel

Publication Order Number:

1 2 5 6

MAX

Source

Gate

3000 / Tape & Reel

Shipping

NTGS5120P/D

MARKING

DIAGRAM

P6 MG

−2.9 A

MAX

†

Related parts for NTGS5120PT1G

NTGS5120PT1G Summary of contents

Page 1

... J T 150 M STG G T 260 °C L (Note: Microdot may be in either location) Device NTGS5120PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX DS(ON) D 111 mW @ − ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – (Note 3) Junction−to−Ambient – Steady State (Note 4) 3. Surface−mounted on FR4 board using pad size (Cu area = 1.127 ...

Page 3

V −2.8 V 3.0 −10 V −4.5 V 2.5 −3.2 V 2.0 1.5 1.0 0 0.5 1.0 1.5 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 ...

Page 4

C 1000 iss 900 800 700 600 500 400 C 300 oss 200 100 C 0 rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = − ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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