NTGS3433T1G ON Semiconductor, NTGS3433T1G Datasheet - Page 3

• Manufacturer Part Number: NTGS3433T1G
• Description: MOSFET P-CH 12V 2.35A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS3433T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.35A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 5V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 3.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS3433T1GOS

0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
1.6
1.4
1.2
0.8
0.6
12
10
8
6
4
2
0
−50
0
1
0
0
Figure 3. On−Resistance vs. Gate−to−Source
−V
I
V
−V
−25
V
D
Figure 5. On−Resistance Variation with
GS
0.25
GS
DS,
Figure 1. On−Region Characteristics
= −3.3 A
GS,
= −4.5 V
= −5 V
T
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
J
, JUNCTION TEMPERATURE (°C)
2
0
0.5
25
Temperature
V
0.75
T
GS
Voltage
J
V
= 25°C
= −4.5 V
GS
50
4
V
= −4 V
GS
1
V
= −3.5 V
75
GS
1.25
= −3 V
100
V
V
6
GS
GS
V
I
T
GS
D
J
= −1.5 V
= −2.5 V
1.5
= −3.3 A
= 25°C
125
= −2 V
http://onsemi.com
1.75
150
8
3
1200
1000
0.15
0.25
0.05
800
600
400
200
0.3
0.2
0.1
16
14
12
10
20
18
8
6
4
2
0
0
0
0.5
0
0
Figure 4. On−Resistance vs. Drain Current and
V
T
−V
−V
2
DS
J
2.5
= 25°C
DS,
1
GS,
≥ −10 V
Figure 2. Transfer Characteristics
Figure 6. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
5
D,
1.5
6
DRAIN CURRENT (AMPS)
T
J
C
C
C
T
7.5
= 25°C
V
Gate Voltage
oss
rss
J
iss
GS
= −55°C
8
2
= −2.5 V
10
10
T
2.5
J
= 125°C
12
12.5
14
V
3
GS
15
= −4.5 V
16
V
T
J
GS
= 25°C
3.5
17.5
= 0 V
18
20
20
4