NTHS5443T1G ON Semiconductor, NTHS5443T1G Datasheet - Page 4

• Manufacturer Part Number: NTHS5443T1G
• Description: MOSFET P-CH 20V 3.6A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHS5443T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHS5443T1GOS; NTHS5443T1GOS; NTHS5443T1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1800
1500
1200
900
600
300
0.01
0.1
0
1
10
0.0001
C
C
0.1
0.02
0.2
0.05
Duty Cycle = 0.5
iss
rss
V
5
DS
Figure 7. Capacitance Variation
= 0 V
−V
GS
0.001
Figure 10. Normalized Thermal Transient Impedance, Junction−to−Ambient
0
Single Pulse
−V
V
GS
DS
= 0 V
1000
100
10
5
1
C
TYPICAL ELECTRICAL CHARACTERISTICS
1
oss
Figure 9. Resistive Switching Time Variation
V
I
V
0.01
D
10
DD
GS
= −1.0 V
= −10 V
= −4.5 V
SQUARE WAVE PULSE DURATION (sec)
R
T
G
J
versus Gate Resistance
, GATE RESISTANCE (OHMS)
= 25°C
15
http://onsemi.com
NTHS5443
0.1
20
10
4
t
t
5
4
3
2
1
0
d(off)
d(on)
0
t
t
f
r
Q
Drain−to−Source Voltage versus Total Charge
GS
P
1
DM
DUTY CYCLE, D = t
1
Figure 8. Gate−to−Source and
t
1
Q
2
Q
G
t
2
, TOTAL GATE CHARGE (nC)
GD
3
100
1
/t
10
2
Q
4
G
PER UNIT BASE = R
80°C/W
T
SURFACE MOUNTED
JM
− T
5
A
= P
I
T
Q
D
J
GD
DM
= −3.6 A
= 25°C
6
100
Z
/Q
qJA
GS
(t)
qJA
= 3.1
7
=
8
11
10
9
8
7
6
5
4
3
2
1
0
1000