UPA507TE-T2-A Renesas Electronics America, UPA507TE-T2-A Datasheet - Page 8

• Manufacturer Part Number: UPA507TE-T2-A
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA507TE-T2-A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
200
150
100
0.01
100
50
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.1
10
10
0
1
1
- 50
- 0.1
0.4
I
Pulsed
D
Pulsed
= −1.0 A
V
SWITCHING CHARACTERISTICS
F(S-D)
V
t
t
T
d(off)
d(on)
t
t
GS
ch
f
r
- Channel Temperature - °C
= −1.8 V
- Source to Drain Voltage - V
0.6
0
−2.5 V
−4.5 V
I
D
- Drain Current - A
V
GS
0.8
- 1
50
= 0 V
100
V
V
R
1
DD
GS
G
= 10 Ω
= −10 V
= −4.0 V
Data Sheet G16626EJ2V0DS
- 10
150
1.2
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
- 4
- 3
- 2
- 1
- 0.01
0
0
I
D
DYNAMIC INPUT CHARACTERISTICS
= −1.0 A
V
DD
V
DS
= −4.0 V
1
- 0.1
−10 V
−16 V
- Drain to Source Voltage - V
Q
G
- Gate Change - nC
2
- 1
3
μ
- 10
V
f = 1.0 MHz
GS
PA507TE
4
= 0 V
C
C
C
iss
oss
rss
- 100
5