UPA507TE-T1-A Renesas Electronics America, UPA507TE-T1-A Datasheet - Page 9

• Manufacturer Part Number: UPA507TE-T1-A
• Description: MOSFET/SCHOTTKY P-CH 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA507TE-T1-A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (T
1000
0.01
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE
100
0.1
FORWARD CURRENT vs. FORWARD VOLTAGE
10
10
1
0.1
0
Pulsed
0.2
V
V
R
F
- Forward Voltage - V
- Reverse Voltage - V
1
0.4
T
A
= 125°C
−25°C
0.6
75°C
25°C
10
f = 1.0 MHz
0.8
Data Sheet G16626EJ2V0DS
100
1
0.0001
0.001
0.01
100
0.1
10
1
REVERSE CURRENT vs. REVERSE VOLTAGE
A
0
= 25°C)
10
V
R
T
- Reverse Voltage - V
A
= 125°C
20
μ
30
PA507TE
75°C
25°C
−25°C
P ulsed
40
7