NTLJS3113PTAG ON Semiconductor, NTLJS3113PTAG Datasheet - Page 3

• Manufacturer Part Number: NTLJS3113PTAG
• Description: MOSFET P-CH 20V 3.5A 6-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJS3113PTAG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1329pF @ 16V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.04
0.03
0.02
1.5
1.3
1.1
0.9
0.7
7
6
5
4
3
2
1
0
-50
0
1.0
Figure 3. On-Resistance versus Drain Current
I
V
V
D
GS
-V
GS
= -6 A
-25
DS
Figure 1. On-Region Characteristics
= -4.5 V
Figure 5. On-Resistance Variation with
= -4.5 V
1
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
T
GS
J
, JUNCTION TEMPERATURE (°C)
1.5
-I
0
= -1.7 V to -8 V
D
, DRAIN CURRENT (AMPS)
2
TYPICAL PERFORMANCE CURVES
25
Temperature
T
T
T
J
J
J
= 100°C
= -55°C
3
= 25°C
50
2.0
75
T
J
4
= 25°C
100
2.5
5
125
http://onsemi.com
-1.3 V
-1.6 V
-1.5 V
-1.4 V
-1.2 V
-1.1 V
NTLJS3113P
150
3.0
6
3
100000
10000
1000
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
100
(T
10
9
8
7
6
5
4
3
2
1
0
J
1
2
0
= 25°C unless otherwise noted)
Figure 4. On-Resistance versus Drain Current
V
Figure 6. Drain-to-Source Leakage Current
T
V
DS
J
-V
GS
-V
= 25°C
4
≥ 10 V
T
DS
= 0 V
GS
J
0.5
Figure 2. Transfer Characteristics
2
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
, GATE-TO-SOURCE VOLTAGE (VOLTS)
J
6
-I
= 25°C
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
1
3
8
versus Voltage
V
V
V
GS
T
GS
T
GS
T
10
J
J
J
= 150°C
= 100°C
= -1.8 V
= -55°C
= -2.5 V
= -4.5 V
1.5
4
12
14
2
5
16
2.5
6
18
20
3
7