NTD4863N-35G ON Semiconductor, NTD4863N-35G Datasheet - Page 4

• Manufacturer Part Number: NTD4863N-35G
• Description: MOSFET N-CH 25V 9.2A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4863N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 990pF @ 12V
• Power - Max: 1.27W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.04
0.03
0.02
0.01
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
0
--50
2
10V
I
V
Figure 3. On- -Resistance vs. Gate- -to- -Source
D
GS
V
= 30 A
--25
DS
3
V
Figure 1. On- -Region Characteristics
Figure 5. On- -Resistance Variation with
= 10 V
GS
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
1
T
J
4
0
, JUNCTION TEMPERATURE (°C)
4.2 V
25
5
2
Temperature
50
Voltage
6
75
7
3
T
TYPICAL PERFORMANCE CURVES
J
100
= 25°C
8
125
9
4
I
T
D
J
= 30 A
= 25°C
http://onsemi.com
150
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
10
4 V
5
175
11
4
10000
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
1000
100
60
50
40
30
20
10
10
0
0
10
5
0
Figure 4. On- -Resistance vs. Drain Current and
V
T
Figure 6. Drain- -to- -Source Leakage Current
V
J
DS
GS
V
= 25°C
V
DS
≥ 10 V
GS
= 0 V
Figure 2. Transfer Characteristics
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
20
1
10
I
D
, DRAIN CURRENT (AMPS)
T
vs. Drain Voltage
J
Gate Voltage
= 25°C
T
30
2
V
V
J
T
T
GS
GS
J
= 125°C
J
= 125°C
= 150°C
= 11.5 V
= 4.5 V
15
3
40
T
J
= --55°C
20
50
4
25
60
5