UPA1918TE-T2-AT Renesas Electronics America, UPA1918TE-T2-AT Datasheet - Page 6

• Manufacturer Part Number: UPA1918TE-T2-AT
• Description: MOSFET 60V P-CH SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1918TE-T2-AT

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 143 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 666pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
-2.4
-1.6
-1.2
300
250
200
150
100
-15
-12
50
-2
-9
-6
-3
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.01
-50
0
Pulsed
V
Pulsed
GS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 10 V
V
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
ch
-0.5
-0.1
- Channel Temperature - C
- Drain to Source Voltage - V
0
I
D
- Drain Current - A
V
50
-1
-1
GS
= 10 V
V
I
D
DS
100
-1.5
-10
= 1.0 mA
T
4.0 V
A
= 10 V
4.5 V
75°C
25°C
= 125°C
25°C
Data Sheet G15926EJ1V0DS
-100
150
-2
-0.0001
0.01
-0.001
100
300
250
200
150
100
0.1
-0.01
10
50
-100
-0.1
1
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.01
-0.01
-1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
0
V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
DS
GS
V
Pulsed
T
A
DS
= 10 V
= 4.5 V
= 125°C
= 10 V
-0.1
-0.1
V
-1
75°C
25°C
25°C
GS
I
I
D
D
- Gate to Source Voltage - V
- Drain Current - A
- Drain Current - A
-2
-1
-1
T
A
-3
= 25°C
125°C
T
-10
-10
25°C
75°C
A
75°C
25°C
= 125°C
PA1918
25°C
-4
-100
-100
-5