AO3415 Alpha & Omega Semiconductor Inc, AO3415 Datasheet

MOSFET P-CH -20V -4.0A SOT23

AO3415

Manufacturer Part Number
AO3415
Description
MOSFET P-CH -20V -4.0A SOT23
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO3415

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
1450pF @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1010-2

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Rev 6: July 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO3415 uses advanced trench technology to provide
excellent R
voltages as low as 1.8V. This device is suitable for use as
a load switch applications.
DS(ON)
, low gate charge and operation with gate
B
Parameter
C
T
T
T
T
Top View
Top View
A
A
A
A
=25° C
=70° C
=25° C
=70° C
A
A D
A
=25° C unless otherwise noted
SOT23
SOT23
t ≤ 10s
Steady-State
Steady-State
D
D
Bottom View
Bottom View
S
S
G
G
Symbol
V
V
V
I
I
P
T
Symbol
D
DM
www.aosmd.com
J
DS
DS
GS
D
, T
R
R
STG
JA
JL
Product Summary
Parameter
V
I
R
R
R
D
ESD Protected
DS
DS(ON)
DS(ON)
DS(ON)
(at V
Typ
65
85
43
(at V
(at V
(at V
GS
=-4.5V)
GS
GS
GS
Maximum
-55 to 150
= -2.5V)
= -4.5V)
= -1.8V)
-3.5
-20
-20
-30
1.5
±8
-4
1
G
G
20V P-Channel MOSFET
Max
100
80
52
D
D
S
S
-20V
-4A
< 43m
< 54m
< 73m
AO3415
Units
Units
° C/W
° C/W
° C/W
° C
W
V
V
V
A
Page 1 of 5

Related parts for AO3415

AO3415 Summary of contents

Page 1

... General Description The AO3415 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 1.8V. This device is suitable for use as a load switch applications. SOT23 SOT23 Top View Top View Absolute Maximum Ratings T =25° C unless otherwise noted ...

Page 2

... FR-4 board with 2oz. Copper still air environment with T =150°C, using ≤ 10s junction-to-ambient thermal resistance. =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150°C. The SOA curve provides a single pulse rating. J(MAX) www.aosmd.com AO3415 Min Typ Max Units - =55° C ...

Page 3

... Figure 4: On-Resistance vs. Junction Temperature Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 I =-4A D 1.0E+00 40 1.0E-01 1.0E-02 125° 1.0E-03 1.0E-04 25° 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO3415 =-5V =-5V 125°C 125°C 25°C 25°C 0.5 0 1.5 1 (Volts) (Volts =-4A, V =-4A, V =-4.5V =-4. ...

Page 4

... Figure 10: Single Pulse Power Rating Junction-to- Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO3415 C C iss iss C C oss oss (Volts) ...

Page 5

... R esistive Sw itching Test C ircuit & W aveform d(o n) d(o n) Vgs Vgs iode R e covery ircuit & W aveform s D iode R e covery ircuit & W aveform -Isd -Isd - -Vds www.aosmd.com AO3415 Qg Qg Qgd Qgd Qgs Qgs Charge Charge d(o ff) d(o ff 90% 90% 10% 10 Idt = - Idt dI/dt dI/ Page ...

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