NTR1P02T1G ON Semiconductor, NTR1P02T1G Datasheet - Page 3

• Manufacturer Part Number: NTR1P02T1G
• Description: MOSFET P-CH 20V 1A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR1P02T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 165pF @ 5V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.18Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR1P02T1GOSTR

Final Product/Process Change Notification #16257
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available
upon request.
CHANGED PART IDENTIFICATION:
SOT23 Products assembled with the Copper Wire from the ON Semiconductor facility in
Leshan, China, will have a Finish Good Date Code representing Work Week 31, 2009 or
newer.
Issue Date: 26 May 2009
Rev.14 Jun 2007
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