NTR1P02T1G ON Semiconductor, NTR1P02T1G Datasheet - Page 2
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NTR1P02T1G
Manufacturer Part Number
NTR1P02T1G
Description
MOSFET P-CH 20V 1A SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTR1P02T1G.pdf
(6 pages)
Specifications of NTR1P02T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 5V
Input Capacitance (ciss) @ Vds
165pF @ 5V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR1P02T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
69 000
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
36 000
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR1P02T1G
Manufacturer:
ON/安森美
Quantity:
20 000
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
BODY−DRAIN DIODE RATINGS (Note 1)
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward On−Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(Negative Temperature Coefficient)
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
S
S
S
S
GS
DS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
DD
DS
DS
DS
= −0.6 A, V
= −0.6 A, V
= −1 A, dI
= −1 A, dI
= −20 V, V
= −20 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −15 V, V
= −15 V, V
= −15 V, V
= 0 V, I
= V
= −10 V, I
= −4.5 V, I
= −15 V, I
= −15 V, I
= −15 V, I
= −15 V, I
GS
, I
D
S
S
D
/dt = 100 A/ms, V
/dt = 100 A/ms, V
= −10 mA)
GS
GS
GS
GS
GS
D
D
D
D
D
= −250 mA)
D
GS
GS
GS
GS
GS
= −1.5 A)
= −1 A, V
= −1 A, V
= −1 A, V
= −1 A, V
= −0.75 A)
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
= 0 V)
= 0 V, T
= 0 V, T
= 0 V, T
= −5 V, I
= −5 V, I
= −5 V, I
J
GS
GS
GS
GS
J
J
= 150°C)
D
D
D
= 25°C)
= 150°C)
Characteristic
GS
= −0.8 A)
= −0.8 A)
= −0.8 A)
= −5 V, R
= −5 V, R
= −5 V, R
= −5 V, R
GS
GS
= ±20 V, V
= 0 V)
= 0 V)
(T
G
G
G
G
A
= 2.5 W)
= 2.5 W)
= 2.5 W)
= 2.5 W)
= 25°C unless otherwise noted)
DS
= 0 V)
http://onsemi.com
NTR1P02T1
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
Q
DSS
GSS
t
t
t
oss
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
−1.1
Min
−20
0.148
0.235
0.008
−1.9
−4.0
0.75
−0.8
−0.6
13.5
10.5
Typ
165
110
7.0
9.0
9.0
3.0
2.5
1.0
3.0
32
35
0.180
0.280
±100
Max
−1.0
−2.3
−1.0
−10
mV/°C
mV/°C
Unit
nA
nC
mC
mA
pF
ns
ns
W
V
V
V