NTR0202PLT1G ON Semiconductor, NTR0202PLT1G Datasheet - Page 2

• Manufacturer Part Number: NTR0202PLT1G
• Description: MOSFET P-CH 20V 400MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR0202PLT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 200mA, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.18nC @ 10V
• Input Capacitance (ciss) @ Vds: 70pF @ 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.4 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.8Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 400mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR0202PLT1GOSTR

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3)
BODY−DRAIN DIODE CHARACTERISTICS (Note 2)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(Negative Temperature Coefficient)
(V
(V
(V
(I
(I
S
S
GS
DS
DS
DS
GS
GS
DS
= −400 mA, V
= −400 mA, V
= −20 V, V
= −20 V, V
= −10 V, I
= 0 V, I
= V
= −10 V, I
= −4.5 V, I
GS
, I
D
D
= −10 mA)
D
D
= −250 mA)
D
GS
GS
= −200 mA)
= −200 mA)
GS
GS
= −50 mA)
= 0 V, T
= 0 V, T
= 0 V)
= 0 V, T
J
J
J
GS
Characteristic
= 25°C)
= 150°C)
= 150°C)
= ± 20 V, V
(T
A
(V
(V
= 25°C unless otherwise noted)
DS
(V
V
DD
DS
(I
GS
(I
DS
S
S
= 0 V)
dI
= −15 V, I
= −15 V, I
= −1.0 A, V
dI
= −10 V, R
= −1.0 A, V
= −5.0 V, V
S
V
F = 1.0 MHz)
S
/dt = 100 A/ms)
/dt = 100 A/ms)
GS
= −10 V)
http://onsemi.com
D
D
G
= −200 mA,
= −200 mA,
GS
GS
GS
= 6.0 W)
= 0 V,
= 0 V,
= 0 V,
2
V
Symbol
R
V
(BR)DSS
Q
t
t
I
I
C
Q
Q
Q
DS(on)
C
V
GS(th)
C
d(on)
d(off)
DSS
GSS
g
TOT
t
t
t
oss
t
t
GD
SD
rss
GS
RR
iss
rr
a
b
fs
r
f
−1.1
Min
−20
−0.65
0.007
−1.9
0.55
0.80
2.18
0.41
0.40
−0.8
11.8
Typ
3.0
0.5
3.0
6.0
33
70
74
26
18
4
9
3
±100
Max
−1.0
−2.3
0.80
1.10
−1.0
−10
mV/°C
mV/°C
Mhos
Unit
nC
mA
nA
pF
mC
ns
ns
W
V
V
V