AO3460 Alpha & Omega Semiconductor Inc, AO3460 Datasheet - Page 2

• Manufacturer Part Number: AO3460
• Description: MOSFET N-CH 60V .65A SOT23-3
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3460

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 650mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 650mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 27pF @ 30V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 785-1194-2

AO3460
Alpha & Omega Semiconductor, Ltd.
A: The value of R
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
SWITCHING PARAMETERS
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
Rev 1: May 2008
FS
GS(th)
DS(ON)
SD
iss
oss
rss
rr
DSS
θJA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
is measured with the device mounted on 1in
Parameter
J
=25°C unless otherwise noted)
2
Conditions
I
V
V
V
V
V
V
V
I
V
V
R
I
D
S
F
F
FR-4 board with 2oz. Copper, in a still air environment with T
DS
DS
DS
GS
GS
GS
DS
GS
GS
=0.1A,V
GEN
=0.65A, dI/dt=100A/µs, V
=0.65A, dI/dt=100A/µs, V
=250µA, V
2
FR-4 board with 2oz. Copper, in a still air environment with T
=60V, V
=0V, V
=V
=10V, V
=10V, I
=4.5V, I
=5V, I
=0V, V
=10V, V
=3Ω
GS
θJL
D
I
GS
and lead to ambient.
GS
D
DS
=0.65A
D
=250uA
D
GS
DS
DS
=0V
=0.65A
GS
=±20V
=0.5A
=30V, f=1MHz
=0V
=5V
=30V, R
=0V
L
=75Ω,
T
T
J
GS
GS
=125°C
J
=55°C
=-9V
=-9V
Min
1.6
60
1
19.7
11.3
Typ
2.2
1.4
2.5
1.6
0.8
0.8
5.3
2.8
5.5
7.5
22
6
2
A
=25°C. The
www.aosmd.com
A
=25°C. The
Max
±10
2.5
1.7
1.2
27
14
1
5
3
2
1
Units
µA
µA
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
A
S
V
A