2N7002ET1G ON Semiconductor, 2N7002ET1G Datasheet - Page 3

• Manufacturer Part Number: 2N7002ET1G
• Description: MOSFET N-CH 60V 260MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of 2N7002ET1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.81nC @ 5V
• Input Capacitance (ciss) @ Vds: 26.7pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.26 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002ET1G; 2N7002ET1GOSTR

Product Bulletin #16134
AFFECTED DEVICE LIST
PART
2N7002ET1G
2N7002LT1
2N7002LT1G
BAS116LT1G
BAS16LT1
BAS16LT1G
BAS19LT1G
BAS20LT1G
BAS21LT1
BAS21LT1G
BAS21LT1H
BAS21LT3
BAS21LT3G
BAS40-04LT1
BAS40-04LT1G
BAS40-06LT1G
BAS40LT1
BAS40LT1G
BAS70-04LT1
BAS70-04LT1G
BAS70LT1G
BAT54ALT1
BAT54ALT1G
BAT54CLT1G
BAT54LT1
BAT54SLT1
BAT54SLT1G
BAV199LT1
BAV199LT1G
BAV70LT1
BAV70LT1G
BAV70LT3G
BAV74LT1G
BAV99LT1G
BAV99LT3G
BAW56LT1
BAW56LT1G
BAW56LT3G
BC807-16LT1
BC807-16LT1G
BC807-16LT3G
BC807-25LT1
BC807-25LT1G
BC807-25LT3G
BC807-40LT1
BC807-40LT1G
BC807-40LT3G
BC817-16LT1
BC817-16LT1G
BC817-16LT3G
BC817-25LT1
BC817-25LT1G
BC817-25LT1H
Issue Date: 11 Jul 2008
Rev.07-02-06
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