2SK3444(TE24L,Q) Toshiba, 2SK3444(TE24L,Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3444(TE24L,Q)
• Description: MOSFET N-CH 200V 25A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3444(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 2080pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
0.1
10
1
1
I D max (continuous)
* Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
I D max (pulsed) *
Tc = 25°C
DC operation
Drain-source voltage V
Tc = 25°C
0.01
Safe operating area
0.1
10
10 μ
10
1
0.2
0.1
Duty = 0.5
0.05
0.02
0.01
Single pulse
1 ms*
100 μ
100 μs*
100
DS
(V)
V DSS max
1 m
1000
Pulse width t
r
th
10 m
5
– t
w
R
V
w
DD
G
= 25 Ω
(S)
= 50 V, L = 1.26 mH
500
400
300
200
100
−15 V
0
15 V
25
100 m
Test circuit
Channel temperature (initial) T
P DM
50
Duty = t/T
R th (ch-c) = 1.0°C/W
1
t
75
T
E
AS
Ε AS
– T
V
DD
=
ch
100
B
2
1
Waveform
VDSS
10
I
⋅
AR
L
⋅
2 I
ch
⋅
125
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
DS
2009-09-29
B VDSS
2SK3444
150
−
V DD
⎞
⎟
⎟
⎠