2SK2719(F) Toshiba, 2SK2719(F) Datasheet - Page 5

• Manufacturer Part Number: 2SK2719(F)
• Description: MOSFET N-CH 900V 3A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2719(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.05
0.03
0.01
0.5
0.3
0.1
30
10
3
1
1
I D max (pulsed)*
I D max (continuous)
*: Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
Tc = 25°C
3
Drain-source voltage V
0.005
0.003
0.05
0.03
0.01
Safe Operating Area
0.5
0.3
0.1
10 μ
10
3
1
0.05
0.02
Duty = 0.5
DC operation
Tc = 25°C
30
0.01
0.2
0.1
100 μ
100
DS
(V)
Single pulse
V DSS max
300
1 ms*
100 μs*
1 m
1000
Pulse width t
r
th
10 m
5
– t
w
R
V
w
DD
G
= 25 Ω
(s)
= 90 V, L = 60 mH
500
400
300
200
100
0
25
100 m
−15 V
15 V
P DM
Test circuit
Channel temperature (initial) T
Duty = t/T
R th (ch-c) = 1.0°C/W
50
t
1
T
75
E
AS
Ε
– T
AS
V
ch
100
DD
=
B
10
Wave form
1
2
VDSS
I
·L·I
AR
ch
2
125
·
⎛
⎜
⎜
⎝
(°C)
B
VDSS
2009-09-29
V
2SK2719
DS
B
VDSS
150
−
V
DD
⎞
⎟
⎟
⎠