2SK2376(Q) Toshiba, 2SK2376(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK2376(Q)
• Description: MOSFET N-CH 60V 45A 2-10S1B
• Manufacturer: Toshiba

Specifications of 2SK2376(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3350pF @ 10V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2SK2376
4
2009-09-29