2SJ407(F) Toshiba, 2SJ407(F) Datasheet - Page 5

• Manufacturer Part Number: 2SJ407(F)
• Description: MOSFET P-CH 200V 5A TO-220NIS
• Manufacturer: Toshiba

Specifications of 2SJ407(F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: 2-10R1B
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 30 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2SJ407
5
2009-09-29