TPC8A04-H(TE12L,Q) Toshiba, TPC8A04-H(TE12L,Q) Datasheet

TPC8A04-H(TE12L,Q)

Manufacturer Part Number

TPC8A04-H(TE12L,Q)

Description

MOSFET N-CH SBD 18A SOP8 2-6J1B

Manufacturer

Toshiba

Datasheet

1.TPC8A04-HTE12LQ.pdf (8 pages)

Specifications of TPC8A04-H(TE12L,Q)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

2.3V @ 1mA

Mounting Type

Surface Mount

Package / Case

8-SOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Gate Charge (qg) @ Vgs

Rds On (max) @ Id, Vgs

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High Efficiency DC-DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Built-in schottky barrier diode

Low forward voltage: V

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

(Tc = 25℃) (Note 4)

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

Pulsed (Note 1)

DSS

= 20 kΩ)

DSF

= 13 nC (typ.)

= 1.3 to 2.3 V (V

(Note 2a)

(Note 2b)

(t = 10 s)

(Note 1)

= 100 μA (max) (V

(Note 3)

= −0.6 V (max)

Silicon N-Channel MOS Type (U-MOS V-H)

DS (ON)

(Ta = 25°C)

| = 62 S (typ.)

TPC8A04-H

Symbol

DGR

GSS

DSS

stg

= 2.6 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to 150

Rating

0.082

±20

211

150

1.9

1.0

= 1 mA)

Unit

°C

Weight: 0.085g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

TPC8A04-H

2-6J1B

2010-04-20

⎯

Unit: mm

Related parts for TPC8A04-H(TE12L,Q)

TPC8A04-H(TE12L,Q) Summary of contents

Page 1

... This transistor is an electrostatic-sensitive device. Handle with care. TPC8A04-H = 2.6 mΩ (typ.) DS (ON (typ mA (Ta = 25°C) Symbol Rating Unit DSS DGR ± GSS 1 1 211 0.082 150 °C ch −55 to 150 T °C stg 1 TPC8A04-H Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-6J1B Weight: 0.085g (typ.) Circuit Configuration 2010-04-20 ...

Page 2

... The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8A04-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2010-04-20 ...

Page 3

... gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF = TPC8A04-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 100 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.3 2.3 ⎯ 3.2 4.5 ⎯ 2.6 3.6 ⎯ ⎯ 4400 5700 = MHz ⎯ ...

Page 4

... Drain-source voltage V 0.20 0.15 0.10 0. (V) Gate-source voltage V 10 Common source Ta = 25°C Pulse test 1 100 0.1 4 TPC8A04-H I – 2.55 2.5 2.45 2.4 Common source Ta = 25°C Pulse test 2.3 V 0.4 0.8 1.2 1 – Common source Ta = 25°C ...

Page 5

... Drain-source voltage V 2.0 C iss 1.5 C oss 1.0 C rss 0.5 Common source Pulse test 0 −80 −40 100 (V) Ambient temperature Ta (° 160 TPC8A04-H − 4 Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1.0 (V) DS − 120 160 Dynamic input/output characteristics 16 Common source 25° ...

Page 6

... Safe operating area 1000 100 I D max (Pulse *Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage – 0.01 0 Pulse width t (s) w 100 (V) 6 TPC8A04-H (2) (1) Single Pulse 100 1000 2010-04-20 ...

Page 7

... Pulse test 100 25°C 1 −0.2 −0.4 −0.6 −0.8 0 Drain-source voltage V (V) DSF Tch – 160 Pulse test 140 120 100 Drain-source voltage V ( DSS 100000 Pulse test 10000 1000 100 10 − Channel temperature Tch (° TPC8A04-H – Tch (typ 120 160 2010-04-20 ...

Page 8

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 TPC8A04-H 2010-04-20 ...

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