2SK2311(TE24L,Q) Toshiba, 2SK2311(TE24L,Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK2311(TE24L,Q)
• Description: MOSFET N-CH 60V 25A 2-10S2B
• Manufacturer: Toshiba

Specifications of 2SK2311(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: 2-10S2B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 40 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2SK2311
4
2009-09-29