2SK2311(TE24L,Q) Toshiba, 2SK2311(TE24L,Q) Datasheet - Page 4
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2SK2311(TE24L,Q)
Manufacturer Part Number
2SK2311(TE24L,Q)
Description
MOSFET N-CH 60V 25A 2-10S2B
Manufacturer
Toshiba
Datasheet
1.2SK2311TE24LQ.pdf
(6 pages)
Specifications of 2SK2311(TE24L,Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 10V
Power - Max
40W
Mounting Type
Surface Mount
Package / Case
2-10S2B
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.046 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
40 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2SK2311
4
2009-09-29