TPCA8011-H(TE12LQM Toshiba, TPCA8011-H(TE12LQM Datasheet

TPCA8011-H(TE12LQM

Manufacturer Part Number

TPCA8011-H(TE12LQM

Description

MOSFET N-CH 20V 40A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8011-HTE12LQM.pdf (7 pages)

Specifications of TPCA8011-H(TE12LQM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.5 mOhm @ 20A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

40A

Vgs(th) (max) @ Id

1.3V @ 200µA

Gate Charge (qg) @ Vgs

32nC @ 5V

Input Capacitance (ciss) @ Vds

2900pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0035 Ohms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

40 A

Power Dissipation

45 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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High Efficiency DC／DC Converter Applications

Notebook PC Applications

Portable-Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc=25℃)

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

(Tc=25℃) (Note 4)

Pulsed (Note 1)

DSS

= 20 kΩ)

=16 nC (typ.)

= 0.6 to 1.3 V (V

(Note 2a)

(Note 2b)

(t = 10 s)

(Note 1)

= 10 µA (max) (V

(Note 3)

DS (ON)

TPCA8011-H

(Ta = 25°C)

| =120 S (typ.)

Symbol

DGR

GSS

DSS

stg

= 2.7 mΩ (typ.)

= 10 V, I

= 20 V)

−55 to 150

Rating

±12

120

208

150

2.8

1.6

2.0

= 200 μA)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

0.95±0.05

1,2,3：SOURCE

5,6,7,8：DRAIN

0.5±0.1 1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8011-H

0.4±0.1

2-5Q1A

2006-11-16

―

0.8±0.1

4：GATE

1.1±0.2

0.05 M A

0.15±0.05

0.595

0.166±0.05

Unit: mm

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TPCA8011-H(TE12LQM Summary of contents

Page 1

... 2 1 208 2 150 °C ch −55 to 150 T °C stg 1 TPCA8011-H Unit: mm 0.4±0.1 0.5±0.1 1.27 0. 0.15±0. 0.595 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0.2 4.25±0 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN ― JEDEC ― JEITA 2-5Q1A TOSHIBA Weight: 0 ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) R 44.6 °C/W th (ch-a) R 78.1 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (Unit: mm) ( Ω TPCA8011-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2006-11-16 ...

Page 3

... gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8011-H Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 8 ⎯ 0.6 1.3 V ⎯ 4.7 7.5 mΩ ⎯ 2.7 3.5 ⎯ 60 120 S ⎯ ...

Page 4

... Drain-source voltage V V 0.40 0.32 0.24 0.16 0. Gate-source voltage (ON) 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 1 Drain current I 4 TPCA8011-H I – Common source 2.5 2 25°C Pulse test 2.3 2.2 2 (V) DS – Common source Ta = 25℃ ...

Page 5

... I DR 1000 Common source Ta = 25°C Pulse test 4 100 −0.2 −0.4 160 0 Drain-source voltage 2.5 2.0 1.5 1.0 0.5 0 −80 −40 100 0 Ambient temperature Ta (° TPCA8011-H – 2 −0.6 −0.8 −1.0 (V) DS – Ta Common source 0.2 mA Pulse test 40 80 120 160 2006-11-16 ...

Page 6

... I D max (Continuous operation Tc=25℃ * Single - pulse Ta=25℃ 1 Curves must be derated linearly with increase in temperature. V DSS max 0.1 10 0.1 1 Drain-source voltage V ( – Single - Pulse 0 100 Pulse width t ( 160 0 40 Case temperature Tc (°C) 100 6 TPCA8011-H (2) (1) (3) 1000 P – 120 160 2006-11-16 ...

Page 7

... TPCA8011-H 2006-11-16 ...

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