TPCA8006-H(TE12LQM Toshiba, TPCA8006-H(TE12LQM Datasheet

TPCA8006-H(TE12LQM

Manufacturer Part Number

TPCA8006-H(TE12LQM

Description

MOSFET N-CH 100V 18A SOP-8 ADV

Manufacturer

Toshiba

Datasheet

1.TPCA8006-HTE12LQM.pdf (7 pages)

Specifications of TPCA8006-H(TE12LQM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

67 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

5V @ 1mA

Gate Charge (qg) @ Vgs

12nC @ 10V

Input Capacitance (ciss) @ Vds

780pF @ 10V

Power - Max

45W

Mounting Type

Surface Mount

Package / Case

2-5Q1A

Transistor Polarity

N Channel

Continuous Drain Current Id

45A

Drain Source Voltage Vds

100V

On Resistance Rds(on)

67mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Configuration

Single Quad Drain Triple Source

Resistance Drain-source Rds (on)

0.067 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

18 A

Power Dissipation

45 W

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Switching Regulator Applications

Motor Drive Applications

DC／DC Converter Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High speed switching

Low drain-source ON-resistance

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVII)

(Note 2a) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

DS (ON)

(Tc=25℃)

(Note 2a)

(Note 2b)

(t = 10 s)

= 3.0 to 5.0 V (V

(Note 1)

(Note 3)

= 100 µA (max) (V

= 41 mΩ (typ.) (V

TPCA8006-H

(Ta = 25°C)

Symbol

DGR

GSS

DSS

stg

| = 15 S (typ.)

= 10 V, I

= 100 V)

−55 to 150

=10V, I

Rating

100

±20

224

150

2.8

1.6

4.5

= 1 mA)

=9A)

Unit

°C

Weight: 0.069 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

1,2,3：SOURCE

5,6,7,8：DRAIN

1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8006-H

0.4±0.1

2-5Q1A

2006-11-20

―

0.8±0.1

4：GATE

0.05 M A

0.15±0.05

0.595

Unit: mm

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TPCA8006-H(TE12LQM Summary of contents

Page 1

... GSS 2 1 224 4 150 °C ch −55 to 150 T °C stg 1 TPCA8006-H Unit: mm 0.4±0.1 1.27 0. 0.15±0.05 4 0.595 1 A 5.0±0.2 0. 4.25±0 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 2006-11-20 ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) R 44.6 °C/W th (ch-a) R 78.1 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (Unit: mm) ( Ω， TPCA8006-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm 2006-11-20 ...

Page 3

... Duty < µ ∼ − gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8006-H Min Typ. Max Unit ⎯ ⎯ ±100 nA ⎯ ⎯ µA 100 ⎯ ⎯ 100 V ⎯ 3.0 5.0 V ⎯ mΩ ⎯ 7 ⎯ ⎯ 780 ⎯ ⎯ ...

Page 4

... Drain-source voltage 1.6 1.2 0.8 0 Gate-source voltage (ON) 1 Common source Ta = 25°C Pulse test 0 100 0.01 0.1 1 Drain current I 4 TPCA8006-H I – Common source 25°C 8.5 Pulse test 8 7 (V) DS – Common source Ta = 25°C Pulse test 4 (V) GS − I ...

Page 5

... Pulse test Total gate charge Q (nC) g 100 Common source Ta = 25°C Pulse test 10 1 0.1 160 −0.2 0 Drain-source voltage Common source C rss Pulse test 0 −80 −40 100 Ambient temperature Ta (° TPCA8006-H I – −0.4 −0.6 −0.8 −1.0 −1.2 ( – 120 160 2006-11-20 ...

Page 6

... I D max (Continuous) 10ms * DC Operation Tc = 25° Single - pulse 0 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.01 0 100 Drain-source voltage V ( – (2) (1) (3) Single - pulse 0 100 Pulse width t ( 160 0 40 Case temperature Tc (°C) 1000 6 TPCA8006-H 1000 P – 120 160 2006-11-20 ...

Page 7

... TPCA8006-H 2006-11-20 ...

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