2SK2782(TE16L1,Q) Toshiba, 2SK2782(TE16L1,Q) Datasheet

2SK2782(TE16L1,Q)

Manufacturer Part Number

2SK2782(TE16L1,Q)

Description

MOSFET N-CH 60V 20A SC-64

Manufacturer

Toshiba

Datasheet

1.2SK2782TE16L1Q.pdf (6 pages)

Specifications of 2SK2782(TE16L1,Q)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

55 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

25nC @ 10V

Input Capacitance (ciss) @ Vds

880pF @ 10V

Power - Max

40W

Mounting Type

Surface Mount

Package / Case

2-7B5B

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.055 Ohms

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

20 A

Power Dissipation

40 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Chopper Regulator, DC-DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON-resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

temperature

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L

= 25 V, T

Pulse (Note 1)

DC (Note 1)

= 20 kΩ)

: I

: V

DSS

= 25°C (initial), L = 530 μH, R

(Note 2)

= 0.8 to 2.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

Symbol

stg

th (ch−c)

th (ch−a)

DS (ON)

2SK2782

| = 11 S (typ.)

= 10 V, I

= 0.039 Ω (typ.)

−55 to 150

= 60 V)

Rating

±20

156

150

3.125

Max

125

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 20 A

Weight: 0.36 g (typ.)

0.6 ± 0.15

JEDEC

JEITA

TOSHIBA

0.95 MAX.

JEDEC

JEITA

TOSHIBA

0.6 ± 0.15

0.95 MAX.

0.6 ± 0.15

1. GATE

2. DRAIN

3. SOURSE

1. GATE

2. DRAIN

3. SOURSE

（HEAT SINK）

6.8 MAX.

−π−MOSV)

5.2 ± 0.2

2.3

5.2 ± 0.2

2.3

6.8 MAX.

2.3

2-7B5B

2-7B7B

SC-64

2009-12-21

―

2SK2782

Unit: mm

0.6 MAX.

0.6 MAX

Related parts for 2SK2782(TE16L1,Q)

2SK2782(TE16L1,Q) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON-resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement mode : V = 0 Absolute Maximum Ratings Characteristic Drain− ...

Page 2

... Note line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK2782 2009-12-21 ...

Page 4

4 2SK2782 2009-12-21 ...

Page 5

Ω 530 μ 2SK2782 1 ⎛ B ⎞ VDSS = ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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