TPCA8016-H(TE12LQM Toshiba, TPCA8016-H(TE12LQM Datasheet - Page 5

• Manufacturer Part Number: TPCA8016-H(TE12LQM
• Description: MOSFET N-CH 60V 25A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8016-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1375pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8016-H(TE12L,Q; TPCA8016HTE12LQMTR; TPCA8016HTE12LQTR; TPCA8016HTE12LQTR

10000
1000
100
50
40
30
20
10
50
40
30
20
10
10
0
−80
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V DS
V GS = 4.5 V
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
V GS
Dynamic input/output
Capacitance – V
10
0
1
characteristics
R
DS (ON)
I D = 6.3 A
40
24
V DS = 48 V
6.3
– Ta
13
13
20
g
80
10
DS
DS
Common source
I D = 25 A
Ta = 25°C
Pulse test
25
(nC)
25
°
(V)
120
C)
C oss
C rss
C iss
100
160
30
25
20
15
10
5
0
5
1000
100
0.1
10
−80
1
3
2
1
0
0
Common source
V DS = 10V
I D = 1mA
Pulse test
Common source
Ta = 25°C
Pulse test
4.5
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
5
3
0
10
−0.4
1
I
DR
V
th
– V
40
– Ta
DS
−0.6
80
TPCA8016-H
V GS = 0 V
DS
−0.8
°
(V)
120
C)
2006-11-17
−1.0
160