TPCA8021-H(TE12LQM Toshiba, TPCA8021-H(TE12LQM Datasheet - Page 6

• Manufacturer Part Number: TPCA8021-H(TE12LQM
• Description: MOSFET N-CH 30V 27A SOP-8 ADV
• Manufacturer: Toshiba

Specifications of TPCA8021-H(TE12LQM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 1395pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
2.5
1.5
0.5
0.1
0.1
10
3
2
1
1
0
0.1
0.1
0
I D max (Pulse)
I D max (Continuous)
Curves must be derated linearly
with increase in temperature.
* Single - pulse
Ta = 25℃
(1)
(2)
Drain-source voltage V
Ambient temperature Ta (
1000
40
100
0.1
10
0.001
*
Safe operating area
1
1
1
DC Operation
(1) Device mounted on a glass-epoxy board (a)
(2) Device mounted on a glass-epoxy board (b)
(3) Tc=25℃
(1)Device mounted on a glass-epoxy
(2)Device mounted on a
Tc = 25℃
P
board(a) (Note 2a)
ｔ＝10s
(Note 2a)
(Note 2b)
D
glass-epoxy board(b) (Note 2b)
80
– Ta
0.01
V DSS max
10
10
t =1ms *
DS
120
10ms *
(V)
°
C)
0.1
160
100
100
Pulse width t
r
6
th
– t
1
w
w
(s)
50
40
30
20
10
0
0
10
Case temperature T
40
100
Single - pulse
P
(3)
D
(2)
(1)
80
– Tc
1000
C
TPCA8021-H
120
(
°
C)
2006-01-17
160