2SK2865(TE16L1,NQ) Toshiba, 2SK2865(TE16L1,NQ) Datasheet - Page 5
2SK2865(TE16L1,NQ)
Manufacturer Part Number
2SK2865(TE16L1,NQ)
Description
MOSFET N-CH 600V 2A SC-64
Manufacturer
Toshiba
Datasheet
1.2SK2865TE16L1NQ.pdf
(6 pages)
Specifications of 2SK2865(TE16L1,NQ)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 10V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
2-7J1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
R
V
G
DD
= 25 Ω
5
= 90 V, L = 41 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2010-02-05
VDSS
2SK2865
B
VDSS
−
V
DD
⎞
⎟
⎠