TPC8012-H(TE12L,Q) Toshiba, TPC8012-H(TE12L,Q) Datasheet

MOSFET N-CH 200V 1.8A 8-SOP

TPC8012-H(TE12L,Q)

Manufacturer Part Number
TPC8012-H(TE12L,Q)
Description
MOSFET N-CH 200V 1.8A 8-SOP
Manufacturer
Toshiba
Datasheet

Specifications of TPC8012-H(TE12L,Q)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPC8012-H(TE12L)
TPC8012-H(TE12L,Q)
TPC8012-HQTR
TPC8012-HTR
TPC8012-HTR
Switching Regulator Applications
DC/DC Converter Applications
Maximum Ratings
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Characteristics
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
(Note 2a) (Note 4)
GS
DC
Pulse (Note 1)
= 20 kΩ)
(Ta = 25°C)
DSS
th
(Note 2a)
(Note 2b)
= 3.0 to 5.0 V (V
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 3)
= 100 μA (max) (V
DS (ON)
TPC8012-H
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
| = 1.35 S (typ.)
AS
AR
stg
D
ch
D
D
DS
= 0.28 Ω (typ.)
= 10 V, I
DS
= 200 V)
−55 to 150
Rating
2.05
0.19
200
200
±30
150
1.8
7.2
1.9
1.0
1.8
D
1
= 1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.085 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
TPC8012-H
2-6J1B
6
3
2006-01-17
5
4
Unit: mm

Related parts for TPC8012-H(TE12L,Q)

TPC8012-H(TE12L,Q) Summary of contents

Page 1

... TPC8012-H = 0.28 Ω (typ.) DS (ON 1.35 S (typ 200 mA Symbol Rating Unit V 200 V DSS V 200 V DGR ± GSS 150 °C ch −55 to 150 T °C stg 1 TPC8012-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 2006-01-17 ...

Page 2

... Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8012-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = 1.8 A 2006-01-17 ...

Page 3

... Duty < μ ∼ − 160 1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 1 DSF TPC8012-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ 200 ⎯ 3.0 5.0 ⎯ 0.28 0.40 0.65 1.35 ⎯ 440 = MHz ⎯ 80 ⎯ 260 ⎯ ...

Page 4

... Drain-source voltage V 1.0 0.8 0.6 0.4 0 Gate-source voltage V 1 Common source Ta = 25°C Pulse test 0.1 0.01 10 0.1 Drain current I 4 TPC8012-H I – Common source 7 25°C Pulse test – Common source Ta = 25°C Pulse test = 1 0.9 0.45 ...

Page 5

... Drain-source voltage V ° 5.0 4.0 3.0 C iss 2.0 C oss Common source 1 Pulse test 0 −80 −40 Ambient temperature Ta ( 100 (V) 200 V DS 160 120 160 0 C) ° 5 TPC8012-H I – 4 −0.4 −0.6 −0.8 −1.0 −1.2 ( – 120 160 C) ° Dynamic input/output characteristics 20 Common source 1 25° ...

Page 6

... Safe operating area MAX (Pulse 0.1 * Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0 100 Drain-source voltage V (V) DS − Single - pulse 1 10 100 Pulse width t ( DSS MAX 1000 6 TPC8012-H (2) (1) 1000 2006-01-17 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8012-H 20070701-EN 2006-01-17 ...

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