2SK3301(TE16L1,NQ) Toshiba, 2SK3301(TE16L1,NQ) Datasheet - Page 2

• Manufacturer Part Number: 2SK3301(TE16L1,NQ)
• Description: MOSFET N-CH 900V 1A SC-64
• Manufacturer: Toshiba

Specifications of 2SK3301(TE16L1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 3.4V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 165pF @ 25V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1 A
• Power Dissipation: 20 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3301
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
g
Symbol
⎪
V
I
I
DRP
Q
DSF
DR
t
rr
rr
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4: A line under a Lot No. identifies the indication of product
V
I
V
I
V
V
V
V
Duty < = 1%, t
V
G
D
V
GS
DS
DS
GS
DS
DS
DD
GS
= ±10 μA, V
= 10 mA, V
10 V
= 720 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±30 V, V
= 10 V, I
∼ − 400 V, V
0 V
I
I
dI
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
DR
DR
DR
2
(Ta = 25°C)
= 1 A, V
= 1 A, V
/dt = 100 A/μs
w
Test Condition
D
D
D
GS
GS
= 10 μs
DS
GS
= 1 mA
= 0.5 A
Test Condition
DS
= 0.5 A
GS
= 0 V
= 0 V, f = 1 MHz
GS
GS
= 0 V
= 0 V
= 0 V
= 10 V, I
I
= 0 V
= 0 V
V
D
⎯
⎯
DD
= 0.5 A
∼ − 400 V
D
= 1 A
V
OUT
900
Min
±30
Min
2.4
0.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1300
Typ.
0.65
Typ.
1.95
165
110
15
21
15
60
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
6
3
3
2010-02-05
2SK3301
−1.7
Max
Max
±10
100
3.4
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
2
Unit
Unit
nC
nC
nC
μC
μA
μA
pF
pF
pF
ns
ns
Ω
V
V
V
S
A
A
V