TPCF8B01(TE85L,F,M Toshiba, TPCF8B01(TE85L,F,M Datasheet - Page 8

• Manufacturer Part Number: TPCF8B01(TE85L,F,M
• Description: MOSFET P-CH SBD 20V 2.7A 2-3U1C
• Manufacturer: Toshiba

Specifications of TPCF8B01(TE85L,F,M

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 1.35W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1.35 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.0001
0.001
0.01
0.1
10
1
0
Pulse test
20
Junction temperature T j (°C)
40
60
I
5V
R
– T
80
10V
j
100
V
R
=20V
120
(typ.)
140
160
8
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
V
Conduction angle:α
R
0°
Tj=125℃
Rectangular
waveform
α
360°
5
Reverse voltage V R (V)
P
R (AV)
60°
120°
10
– V
R
180°
240°
TPCF8B01
15
2009-09-29
(typ.)
300°
DC
20