IXFB70N60Q2 IXYS, IXFB70N60Q2 Datasheet

MOSFET N-CH 600V 70A PLUS264

IXFB70N60Q2

Manufacturer Part Number
IXFB70N60Q2
Description
MOSFET N-CH 600V 70A PLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFB70N60Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
265nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
890W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
70 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
70
Rds(on), Max, Tj=25°c, (?)
0.088
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
265
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.14
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB70N60Q2
Manufacturer:
ST
Quantity:
9 000
HiPerFET
MOSFET Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Low Intrinsic R
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6 mm (0.063 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Test Conditions
V
V
V
V
S
V
J
J
C
C
C
C
C
GS
DS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
G
= 10V, I
= ±30 V, V
= 0V, I
= V
= V
DM
rr
GS
Power
, V
DSS
, I
DD
, V
D
D
D
= 1mA
= 8mA
≤ V
GS
= 0.5 • I
DS
G
= 0V
DSS
= 0V
,
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFB70N60Q2
30..120/6.7..27
600
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
± 30
± 40
600
600
280
890
150
300
260
70
70
20
10
5
± 200 nA
Max.
5.5
50
88 mΩ
3
N/lbs
V/ns
mA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
Features
Advantages
Applications
PLUS264
G = Gate
S = Source
D25
rr
Double Metal Process for Low Gate
Resistance
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Pulse Generation
Laser Drivers
PLUS 264
Mounting
Space Savings
High Power Density
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies, > 500kHz Switching
DC Choppers
DSS
DS(on)
G
D
S
TM
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
=
=
TM
Package for Clip or Spring
Tab = Drain
D
600V
70A
88mΩ Ω Ω Ω Ω
250ns
= Drain
Tab
DS99006C(7/10)

Related parts for IXFB70N60Q2

IXFB70N60Q2 Summary of contents

Page 1

... ± GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXFB70N60Q2 Maximum Ratings 600 = 1MΩ 600 GS ± 30 ± 280 ≤ 150°C 20 890 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 Characteristic Values Min. Typ. 600 3 ...

Page 2

... DSS 265 , I = 0.5 • DSS D D25 120 0.15 Characteristic Values Min. Typ. JM 1.2 8.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB70N60Q2 TM PLUS264 (IXFB) Outline Max 0.14 °C/W °C/W Max 280 A 1.5 V 250 ns μC A 6,404,065 B1 6,683,344 ...

Page 3

... Volts DS Fig Normalized to 0.5 I DS(on Amperes D © 2010 IXYS CORPORATION, All Rights Reserved = 25º Value vs. I D25 D º º IXFB70N60Q2 Fig. 2. Extended Output Characteristics @ T = 25º Volts DS Fig Normalized to 0.5 I DS(on) Junction Temperature 3 70A 0.6 0.2 -50 - Degrees Centigrade J Fig ...

Page 4

... V - Volts SD Fig. 11. Capacitance 1 00000 MHz 1 0000 1 000 Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. C 5.0 5.5 6.0 6.5 º 0.8 0 iss C oss C rss IXFB70N60Q2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 300V 35A 0mA ...

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